领先的晶圆工艺技术和设备供应商WaferMasters，日前发布了一款多波长拉曼光谱系统（MRS-300）。该系统可实现非破坏性的晶圆应力和晶体质量表征，并可提供这些特性的深度概览图，以评估或量产制造晶圆。另外，它还可用作应变硅技术中Ge特性的非接触、非破坏性表征工具。
WaferMasters, Inc, a leading wafer-processing technology and equipment supplier has announced the release of its Multi-Wavelength Raman Spectroscopy System (MRS-300). This advanced system allows non-destructive wafer characterization of local lattice strain and crystal quality, as well as depth profiling at the point of interest of these important charac
teristics for evaluation or product wafers. It can be used as a non-contact, non-destructive Ge content characterization tool for strained Si technology, as well.
This powerful tool is aimed at improving yields, device performance and quality. The MRS-300 allows process engineers to optimize wafer processing by evaluating the strain and crystal quality characteristics of the wafer as process parameters or even tool sets are varied. It also affords manufacturing engineers a non-destructive method for monitoring internal characteristics of the wafer’s structure for comparison against a production baseline after key processes. . The history of local and global lattice level stress collected between device manufacturing process steps often indicates the probability of premature device failure under normal and accelerated modes of operation. With this non- contact tool, it is possible to predict some electrical performance degradations, even before metallization and contact formations are made.
Dr. Woo Sik Yoo, co-founder and CTO observed that the MRS-300 allows engineers to gain analysis and insight into the physical condition of the wafer or device as a function of depth that previously required destructive cross-sectioning and Transmission Electron Microscopy (TEM). But now, thanks to the non-destructive, non-invasive nature of the MRS-300, sequential physical characterization and electrical data correlation are possible. “The fact that neither the instrument nor