Trench capacitor DRAM Deep channel PR strip process study
关于深槽电容式DRAM深沟槽光阻去除工艺的研究
中芯国际集成电路制造（上海）有限公司，罗仕洲
·深槽式DRAM中光阻残留带来很大的麻烦，需要去除深槽内残留的光阻。
·研究发现H2SO5溶液的浓度直接影响到光阻去除的效果；其浓度在空置时迅速降低。而H2SO4的初始温度较低，需要更多的时间达到工艺温度（125℃），这导致了H2SO5初始浓度衰减。
·采用永久性纠正措施（PCA），通过加入time spiking 、保持H2SO4初始温度和增加一个光阻去除工艺，达到了很好的效果。
罗仕洲，毕业于国立台湾大学，于1995年获得化学工程学士学位；曾在中国台湾和中国大陆拥有湿法领域9年的工作经验。目前担任中芯国际S1 Fab湿法部门经理。
Abstract： DT capacitor formation is key process for trench DRAM m
anufacturing, However The Deep channel PR strip in DRAM process is very critical process of suffering high risk of PR residue, and it was a yield main killer for product.
After study, Found that Caro’s acid (H2SO5) conc. is the guideline of the PR strip capacity. But it will decay very quickly by idle time. After idle for 1.5hrs, remaining H2SO5 concentration is only 13% of initial concentration. When The initial temperature H2SO4 is lower , more time needed for chemical reach process temperature (125℃), which was suspected to cause H2SO5 decay and lower initial concentration. And we do the repeat test successfully, PR residue fail site match BIN fail map well.
To be added by time spike function and keep the initial H2SO4 temp at high level. TheH2SO5 conc. keeps stable, and verify the capability is effective.
To define these actions as Permanent Corrective Action (PCA). The related failure bin is down to 0%
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